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Title: Nanoscale patterning of graphene through femtosecond laser ablation

We report on nanometer-scale patterning of single layer graphene on SiO{sub 2}/Si substrate through femtosecond laser ablation. The pulse fluence is adjusted around the single-pulse ablation threshold of graphene. It is shown that, even though both SiO{sub 2} and Si have more absorption in the linear regime compared to graphene, the substrate can be kept intact during the process. This is achieved by scanning the sample under laser illumination at speeds yielding a few numbers of overlapping pulses at a certain point, thereby effectively shielding the substrate. By adjusting laser fluence and translation speed, 400 nm wide ablation channels could be achieved over 100 μm length. Raster scanning of the sample yields well-ordered periodic structures, provided that sufficient gap is left between channels. Nanoscale patterning of graphene without substrate damage is verified with Scanning Electron Microscope and Raman studies.
Authors:
;  [1] ;  [2]
  1. Department of Physics, Istanbul Technical University, Maslak 34469, Istanbul (Turkey)
  2. Electrical and Computer Engineering, The George Washington University, Washington, DC 20052 (United States)
Publication Date:
OSTI Identifier:
22283215
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABLATION; COMPARATIVE EVALUATIONS; GRAPHENE; HETEROJUNCTIONS; LASER RADIATION; NANOSTRUCTURES; PULSES; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON OXIDES; SUBSTRATES