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Title: Direct imaging of electron recombination and transport on a semiconductor surface by femtosecond time-resolved photoemission electron microscopy

Much effort has been devoted to the development of techniques to probe carrier dynamics, which govern many semiconductor device characteristics. We report direct imaging of electron dynamics on semiconductor surfaces by time-resolved photoemission electron microscopy using femtosecond laser pulses. The experiments utilized a variable-repetition-rate femtosecond laser system to suppress sample charging problems. The recombination of photogenerated electrons and the lateral motion of the electrons driven by an external electric field on a GaAs surface were visualized. The mobility was estimated from a linear relationship between the drift velocity and the potential gradient.
Authors:
; ;  [1] ;  [2] ;  [1] ;  [2]
  1. Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22283214
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRON MICROSCOPY; ELECTRONS; GALLIUM ARSENIDES; LASER RADIATION; PHOTOEMISSION; POTENTIALS; RECOMBINATION; SEMICONDUCTOR MATERIALS; SURFACES; TIME RESOLUTION