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Title: Investigation of high hole mobility In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum well structures grown by molecular beam epitaxy

Modulation-doped In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum-well (QW) structures were grown by molecular beam epitaxy. Cross-sectional transmission electron microscopy and atomic force microscopy studies show high crystalline quality and smooth surface morphology. X-ray diffraction investigations confirm 1.94% compressive strain within In{sub 0.41}Ga{sub 0.59}Sb channel. High room temperature hole mobility with high sheet density of 1000 cm{sup 2}/Vs, 0.877 × 10{sup 12}/cm{sup 2}, and 965 cm{sup 2}/Vs, 1.112 × 10{sup 12}/cm{sup 2} were obtained with different doping concentrations. Temperature dependent Hall measurements show different scattering mechanisms on hole mobility at different temperature range. The sheet hole density keeps almost constantly from 300 K to 77 K. This study shows great potential of In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb QW for high-hole-mobility device applications.
Authors:
; ; ; ; ; ;  [1]
  1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22283211
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; CONCENTRATION RATIO; DOPED MATERIALS; GALLIUM ANTIMONIDES; HALL EFFECT; HETEROJUNCTIONS; HOLE MOBILITY; HOLES; INDIUM COMPOUNDS; MODULATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; QUANTUM WELLS; SHEETS; STRAINS; SURFACES; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION