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Title: Identification of an isolated arsenic antisite defect in GaAsBi

Optically detected magnetic resonance and photoluminescence spectroscopy are employed to study grown-in defects in GaAs{sub 0.985}Bi{sub 0.015} epilayers grown by molecular beam epitaxy. The dominant paramagnetic defect is identified as an isolated arsenic antisite, As{sub Ga}, with an electron g-factor of 2.03 ± 0.01 and an isotropic hyperfine interaction constant A = (900 ± 20) × 10{sup −4} cm{sup −1}. The defect is found to be preferably incorporated during the growth at the lowest growth temperature of 270 °C, but its formation can be suppressed upon increasing growth temperature to 315 °C. The As{sub Ga} concentration is also reduced after post-growth rapid thermal annealing at 600 °C.
Authors:
; ;  [1] ; ;  [2]
  1. Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping (Sweden)
  2. Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere (Finland)
Publication Date:
OSTI Identifier:
22283210
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ARSENIC; BISMUTH COMPOUNDS; CONCENTRATION RATIO; CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTRONS; EMISSION SPECTROSCOPY; GALLIUM ARSENIDES; LANDE FACTOR; MAGNETIC RESONANCE; MOLECULAR BEAM EPITAXY; PARAMAGNETISM; PHOTOLUMINESCENCE; TEMPERATURE DEPENDENCE