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Title: One-step aluminium-assisted crystallization of Ge epitaxy on Si by magnetron sputtering

In this work, one-step aluminium-assisted crystallization of Ge on Si is achieved via magnetron sputtering by applying an in-situ low temperature (50 °C to 150 °C) heat treatment in between Al and Ge depositions. The effect of heat treatment on film properties and the growth mechanism of Ge epitaxy on Si are studied via X-ray diffraction, Raman and transmission electron microscopy analyses. Compared with the conventional two-step process, the one-step aluminium-assisted crystallization requires much lower thermal budget and results in pure Ge epitaxial layer, which may be suitable for use as a virtual substrate for the fabrication of III-V solar cells.
Authors:
; ; ;  [1]
  1. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia)
Publication Date:
OSTI Identifier:
22283208
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; COMPARATIVE EVALUATIONS; CRYSTALLIZATION; DEPOSITION; EPITAXY; FABRICATION; GERMANIUM; HEAT TREATMENTS; MAGNETRONS; RAMAN SPECTROSCOPY; SILICON; SOLAR CELLS; SPUTTERING; TEMPERATURE DEPENDENCE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION