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Title: Efficiency enhancement of InGaN/GaN solar cells with nanostructures

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520 nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9 V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.
Authors:
; ; ;  [1]
  1. Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)
Publication Date:
OSTI Identifier:
22283202
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 30 DIRECT ENERGY CONVERSION; CRYSTALS; ELECTRIC POTENTIAL; ENERGY CONVERSION; ENERGY EFFICIENCY; FILL FACTORS; GALLIUM NITRIDES; HETEROJUNCTIONS; ILLUMINANCE; INDIUM; INDIUM COMPOUNDS; PERFORMANCE; PERIODICITY; QUANTUM WELLS; SOLAR CELLS