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Title: Polarization matching design of InGaN-based semi-polar quantum wells—A case study of (112{sup ¯}2) orientation

We present a theoretical study of the polarization engineering in semi-polar III-nitrides heterostructures. As a case study, we investigate the influence of GaN, AlGaN, and AlInN barrier material on the performance of semi-polar (112{sup ¯}2) InGaN-based quantum wells (QWs) for blue (450 nm) and yellow (560 nm) emission. We show that the magnitude of the total built-in electric field across the QW can be controlled by the barrier material. Our results indicate that AlInN is a promising candidate to achieve (i) reduced wavelength shifts with increasing currents and (ii) strongly increased electron-hole wave function overlap, important for reduced optical recombination times.
Authors:
; ;  [1]
  1. Tyndall National Institute, Lee Maltings, Cork (Ireland)
Publication Date:
OSTI Identifier:
22283201
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; DESIGN; DIFFUSION BARRIERS; ELECTRIC FIELDS; GALLIUM NITRIDES; HETEROJUNCTIONS; HOLES; INDIUM COMPOUNDS; ORIENTATION; PERFORMANCE; PHOTON EMISSION; POLARIZATION; QUANTUM WELLS; RECOMBINATION; WAVE FUNCTIONS