Towards forming-free resistive switching in oxygen engineered HfO{sub 2−x}

Journal Article · Mon Feb 10 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4864653· OSTI ID:22283196

Kurian, J.; Hildebrandt, E.; Alff, L. ^[1]; Bertaud, T.; Walczyk, C.; Calka, P.; Zaumseil, P.; Sowinska, M.; Walczyk, D. ^[2]; Gloskovskii, A. ^[3]; Schroeder, T. ^[2]

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1. Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Strasse 2, 64287 Darmstadt (Germany)
2. IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany)
3. Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg (Germany)

We have investigated the resistive switching behavior in stoichiometric HfO{sub 2} and oxygen-deficient HfO{sub 2−x} thin films grown on TiN electrodes using reactive molecular beam epitaxy. Oxygen defect states were controlled by the flow of oxygen radicals during thin film growth. Hard X-ray photoelectron spectroscopy confirmed the presence of sub-stoichiometric hafnium oxide and defect states near the Fermi level. The oxygen deficient HfO{sub 2−x} thin films show bipolar switching with an electroforming occurring at low voltages and low operating currents, paving the way for almost forming-free devices for low-power applications.

• OSTI ID: 22283196
• Journal Information: Applied Physics Letters, Vol. 104, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL DEFECTS
CRYSTAL GROWTH
ELECTRIC POTENTIAL
ELECTRODEPOSITION
FERMI LEVEL
HAFNIUM OXIDES
HARD X RADIATION
MOLECULAR BEAM EPITAXY
OXYGEN
PHOTOELECTRON SPECTROSCOPY
THIN FILMS
TITANIUM NITRIDES