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Title: Towards forming-free resistive switching in oxygen engineered HfO{sub 2−x}

We have investigated the resistive switching behavior in stoichiometric HfO{sub 2} and oxygen-deficient HfO{sub 2−x} thin films grown on TiN electrodes using reactive molecular beam epitaxy. Oxygen defect states were controlled by the flow of oxygen radicals during thin film growth. Hard X-ray photoelectron spectroscopy confirmed the presence of sub-stoichiometric hafnium oxide and defect states near the Fermi level. The oxygen deficient HfO{sub 2−x} thin films show bipolar switching with an electroforming occurring at low voltages and low operating currents, paving the way for almost forming-free devices for low-power applications.
Authors:
; ; ;  [1] ; ; ; ; ; ;  [2] ;  [3] ;  [2] ;  [4]
  1. Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Strasse 2, 64287 Darmstadt (Germany)
  2. IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany)
  3. Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg (Germany)
  4. (Germany)
Publication Date:
OSTI Identifier:
22283196
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTRIC POTENTIAL; ELECTRODEPOSITION; FERMI LEVEL; HAFNIUM OXIDES; HARD X RADIATION; MOLECULAR BEAM EPITAXY; OXYGEN; PHOTOELECTRON SPECTROSCOPY; THIN FILMS; TITANIUM NITRIDES