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Title: Highly efficient and electrically robust carbon irradiated semi-insulating GaAs based photoconductive terahertz emitters

We demonstrate here an efficient photoconductive THz source with low electrical power consumption. We have increased the maximum THz radiation power emitted from SI-GaAs based photoconductive emitters (PCEs) by two orders of magnitude. By irradiating the SI-GaAs substrate with Carbon-ions up to 2 μm deep, we have created lot of defects and decreased the lifetime of photo-excited carriers inside the substrate. Depending on the irradiation dose, we find 1 to 2 orders of magnitude decrease in total current flowing in the substrate, resulting in subsequent decrease of heat dissipation in the device. This has resulted in increasing maximum cut-off of the applied voltage across PCE electrodes to operate the device without thermal breakdown from ∼35 V to >150 V for the 25 μm electrode gaps. At optimum operating conditions, carbon irradiated (10{sup 14} ions/cm{sup 2}) PCEs give THz pulses with power about 100 times higher in comparison to the usual PCEs on SI-GaAs and electrical to THz power conversion efficiency has improved by a factor of ∼800.
Authors:
; ; ; ; ;  [1]
  1. Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India)
Publication Date:
OSTI Identifier:
22283195
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARBON; CARBON IONS; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; ENERGY LOSSES; GALLIUM ARSENIDES; HEAT TRANSFER; ION BEAMS; IRRADIATION; LIFETIME; PHOTOCONDUCTIVITY; RADIATION DOSES; RADIATION EFFECTS; SILICON; SUBSTRATES; THERMAL DIFFUSIVITY; THZ RANGE