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Title: Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm{sup 2} V{sup −1} s{sup −1} at low operating voltages (<5 V) in air. We further show that the SWCNT-ZTO hybrid ambipolar FETs can be integrated into functional inverter circuits that display high peak gain (>10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.
Authors:
; ;  [1] ;  [2] ; ;  [3] ;  [3] ;  [2] ;  [2]
  1. Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)
  2. (United States)
  3. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States)
Publication Date:
OSTI Identifier:
22283189
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CARBON NANOTUBES; ELECTRIC POTENTIAL; ELECTRONS; FIELD EFFECT TRANSISTORS; GAIN; HETEROJUNCTIONS; HOLE MOBILITY; HOLES; INVERTERS; LAYERS; SEMICONDUCTOR MATERIALS; TIN OXIDES; ZINC COMPOUNDS