Large grain growth of Ge-rich Ge{sub 1−x}Sn{sub x} (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water

Kurosawa, Masashi; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki; Ikenoue, Hiroshi

doi:10.1063/1.4864627

Title: Large grain growth of Ge-rich Ge{sub 1−x}Sn{sub x} (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water

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Abstract

We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge{sub 1−x}Sn{sub x} (x < 0.02) on SiO{sub 2} crystallized by pulsed laser annealing (PLA) in air and water. Despite the very low Sn content of 2%, Sn atoms within the GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (∼800 nmϕ) growth of Ge{sub 0.98}Sn{sub 0.02} polycrystals by using PLA in water. These polycrystals also show a tensile-strain of ∼0.68%. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms.

Authors:

Kurosawa, Masashi ^[1]; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki ^[1]; Ikenoue, Hiroshi ^[2]

Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)

Publication Date:: Mon Feb 10 00:00:00 EST 2014

OSTI Identifier:: 22283188

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 104; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; BACKSCATTERING; ELECTRON DIFFRACTION; GERMANIUM; GRAIN GROWTH; INTERMETALLIC COMPOUNDS; LAYERS; POLYCRYSTALS; RAMAN SPECTROSCOPY; SILICON OXIDES; STRAINS; SUBSTRATES; SURFACES; TIN; WATER

Citation Formats


                    Kurosawa, Masashi, JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Taoka, Noriyuki, Nakatsuka, Osamu, Zaima, Shigeaki, and Ikenoue, Hiroshi. Large grain growth of Ge-rich Ge{sub 1−x}Sn{sub x} (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4864627.

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                    Kurosawa, Masashi, JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Taoka, Noriyuki, Nakatsuka, Osamu, Zaima, Shigeaki, & Ikenoue, Hiroshi. Large grain growth of Ge-rich Ge{sub 1−x}Sn{sub x} (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water.  United States.  https://doi.org/10.1063/1.4864627

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                    Kurosawa, Masashi, JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Taoka, Noriyuki, Nakatsuka, Osamu, Zaima, Shigeaki, and Ikenoue, Hiroshi. 2014.  
        "Large grain growth of Ge-rich Ge{sub 1−x}Sn{sub x} (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water".  United States.  https://doi.org/10.1063/1.4864627.

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@article{osti_22283188,

  title        = {Large grain growth of Ge-rich Ge{sub 1−x}Sn{sub x} (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water},

  author       = {Kurosawa, Masashi and JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 and Taoka, Noriyuki and Nakatsuka, Osamu and Zaima, Shigeaki and Ikenoue, Hiroshi},

  abstractNote = {We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge{sub 1−x}Sn{sub x} (x < 0.02) on SiO{sub 2} crystallized by pulsed laser annealing (PLA) in air and water. Despite the very low Sn content of 2%, Sn atoms within the GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (∼800 nmϕ) growth of Ge{sub 0.98}Sn{sub 0.02} polycrystals by using PLA in water. These polycrystals also show a tensile-strain of ∼0.68%. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms.},

  doi          = {10.1063/1.4864627},

  url          = {https://www.osti.gov/biblio/22283188},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 6,

  volume       = 104,

  place        = {United States},

  year         = {Mon Feb 10 00:00:00 EST 2014},

  month        = {Mon Feb 10 00:00:00 EST 2014}

}

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