Large grain growth of Ge-rich Ge{sub 1−x}Sn{sub x} (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water

Journal Article · Mon Feb 10 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4864627· OSTI ID:22283188

Kurosawa, Masashi ^[1]; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki ^[1]; Ikenoue, Hiroshi ^[2]

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1. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
2. Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)

We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge{sub 1−x}Sn{sub x} (x < 0.02) on SiO{sub 2} crystallized by pulsed laser annealing (PLA) in air and water. Despite the very low Sn content of 2%, Sn atoms within the GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (∼800 nmϕ) growth of Ge{sub 0.98}Sn{sub 0.02} polycrystals by using PLA in water. These polycrystals also show a tensile-strain of ∼0.68%. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms.

• OSTI ID: 22283188
• Journal Information: Applied Physics Letters, Vol. 104, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
BACKSCATTERING
ELECTRON DIFFRACTION
GERMANIUM
GRAIN GROWTH
INTERMETALLIC COMPOUNDS
LAYERS
POLYCRYSTALS
RAMAN SPECTROSCOPY
SILICON OXIDES
STRAINS
SUBSTRATES
SURFACES
TIN
WATER