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Title: Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation

Vacuum ultraviolet (VUV) photoemission spectroscopy is used to investigate the effect of VUV radiation on porous organosilicate (SiCOH) dielectrics during plasma processing. By comparing photoemission spectroscopic results before and after VUV exposure, VUV irradiation with photon energies less than 9.0 eV was found to be beneficial in depleting accumulated charge in SiCOH films while VUV photons with higher energies did not have this effect. Moreover, VUV irradiation with 8.9 eV photons depletes the most charge. From this result, it can be concluded that 8.9 eV is the bandgap plus the electron affinity energy of SiCOH dielectrics.
Authors:
;  [1] ;  [2] ;  [3] ;  [4]
  1. Plasma Processing and Technology Laboratory, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
  2. Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States)
  3. GLOBALFOUNDRIES, Albany, New York 12203 (United States)
  4. Stanford University, Stanford, California 94305 (United States)
Publication Date:
OSTI Identifier:
22283177
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AFFINITY; COMPARATIVE EVALUATIONS; DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; ENERGY GAP; FAR ULTRAVIOLET RADIATION; IRRADIATION; ORGANIC SILICON COMPOUNDS; PHOTOEMISSION; PHOTONS; POROUS MATERIALS; SILICATES; THIN FILMS