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Title: Correlative analysis of the in situ changes of carrier decay and proton induced photoluminescence characteristics in chemical vapor deposition grown GaN

In order to evaluate carrier densities created by 1.6 MeV protons and to trace radiation damage of the 2.5 μm thick GaN epi-layers grown by metalorganic chemical vapor deposition technique, a correlation between the photoconductivity transients and the steady-state photoluminescence spectra have been examined. Comparison of luminescence spectra induced by proton beam and by laser pulse enabled us to evaluate the efficiency of a single proton generation being of 1 × 10{sup 7} cm{sup −3} per 1.6 MeV proton and 40 carrier pairs per micrometer of layer depth. This result indicates that GaN layers can be an efficient material for detection of particle flows. It has been demonstrated that GaN material can also be a rather efficient scintillating material within several wavelength ranges.
Authors:
; ; ; ; ; ;  [1] ; ;  [2]
  1. Vilnius University, Institute of Applied Research, Vilnius LT-10222 (Lithuania)
  2. Centre for Physical Sciences and Technology, Vilnius LT-02300 (Lithuania)
Publication Date:
OSTI Identifier:
22283172
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER DENSITY; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; COMPARATIVE EVALUATIONS; CORRELATIONS; CRYSTAL GROWTH; EMISSION SPECTRA; GALLIUM NITRIDES; LAYERS; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; PROTON BEAMS