Correlative analysis of the in situ changes of carrier decay and proton induced photoluminescence characteristics in chemical vapor deposition grown GaN
- Vilnius University, Institute of Applied Research, Vilnius LT-10222 (Lithuania)
- Centre for Physical Sciences and Technology, Vilnius LT-02300 (Lithuania)
In order to evaluate carrier densities created by 1.6 MeV protons and to trace radiation damage of the 2.5 μm thick GaN epi-layers grown by metalorganic chemical vapor deposition technique, a correlation between the photoconductivity transients and the steady-state photoluminescence spectra have been examined. Comparison of luminescence spectra induced by proton beam and by laser pulse enabled us to evaluate the efficiency of a single proton generation being of 1 × 10{sup 7} cm{sup −3} per 1.6 MeV proton and 40 carrier pairs per micrometer of layer depth. This result indicates that GaN layers can be an efficient material for detection of particle flows. It has been demonstrated that GaN material can also be a rather efficient scintillating material within several wavelength ranges.
- OSTI ID:
- 22283172
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Study of carrier recombination transient characteristics in MOCVD grown GaN dependent on layer thickness
Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si