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Title: Oxygen-induced inhibition of silicon-on-insulator dewetting

We report that solid state dewetting of Si thin film on SiO{sub 2} can be reversibly inhibited by exposing the Si surface to a partial pressure of dioxygen (∼10{sup −7}Torr) at high temperature (∼1100K). Coupling in situ Low-Energy Electron Microscopy and ex situ atomic force microscopy we propose that the pinning of the contact line induced by the presence of small amounts of silicon oxide is the main physical process that inhibits the dewetting.
Authors:
; ; ;  [1]
  1. Aix Marseille Université, CNRS, CINaM UMR 7325, 13288 Marseille (France)
Publication Date:
OSTI Identifier:
22283170
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; COUPLING; ELECTRON MICROSCOPY; OXYGEN; PARTIAL PRESSURE; PRESSURE DEPENDENCE; SILICON; SILICON OXIDES; SOLIDS; SURFACES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; THIN FILMS