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Title: The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates

We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the TFT performance and stability. The adoption of the SiN{sub x}/AlO{sub x} buffer layers as water and hydrogen diffusion barriers significantly improved the device performance and stability against the thermal annealing and negative bias stress, compared to single SiN{sub x} or SiO{sub x} buffer layers. The substrates could be bent down to a radius of curvature of 15 mm and the devices remained normally functional.
Authors:
;  [1] ; ;  [2] ;  [3] ; ;  [4]
  1. Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of)
  2. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)
  3. Transparent Electronics Team, ETRI, Daejeon 305-350 (Korea, Republic of)
  4. LG Display R and D Center, LG Display Co., Ltd., Paju 413-811 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22283162
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; COMPARATIVE EVALUATIONS; FABRICATION; GALLIUM COMPOUNDS; GLASS; IMIDES; INDIUM COMPOUNDS; LAYERS; ORGANIC POLYMERS; PERFORMANCE; PHASE STABILITY; SILICON OXIDES; SUBSTRATES; THIN FILMS; TRANSISTORS; ZINC OXIDES