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Title: Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods

One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis.
Authors:
; ; ; ; ;  [1] ; ;  [2]
  1. Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)
  2. Department of Materials and Optoelectronic Science and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)
Publication Date:
OSTI Identifier:
22283153
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; DOPED MATERIALS; FERROMAGNETISM; GALLIUM NITRIDES; MAGNETIC FIELDS; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; NANOSTRUCTURES; ONE-DIMENSIONAL CALCULATIONS; RAMAN EFFECT; RESOLUTION; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION