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Title: Photoluminescence from InGaAs/GaAs quantum well regrown on a buried patterned oxidized AlAs layer

We present a quasi-planar technological approach for forming a flexible and versatile confinement scheme based on oxidation of AlGaAs buried layers combined to an epitaxial regrowth. This method improves the electrical and optical confinements compared to the lateral oxidation since it allows to define confinement areas from a planar surface. This technique is suitable for the realization of advanced integrated photonic components arrays with close device-to-device spacing such as two-dimensional arrays of vertical-cavity surface-emitting lasers. Our results prove that the oxidation and epitaxial regrowth can be sequenced in a process flow, leading to viable confinement while preserving good radiative properties.
Authors:
; ; ; ;  [1] ;  [2]
  1. CNRS, LAAS, 7 Avenue du Colonel Roche, F-31400 Toulouse (France)
  2. (France)
Publication Date:
OSTI Identifier:
22283148
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; COMPARATIVE EVALUATIONS; CONFINEMENT; EPITAXY; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; OXIDATION; PHOTOLUMINESCENCE; QUANTUM WELLS; SURFACES