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Title: Sub-10 nm nano-gap device for single-cluster transport measurements

We present a versatile procedure for the fabrication of single electron transistor (SET) devices with nanometer-sized clusters and embedded back gate electrode. The process uses sputtering gas-aggregation for the growth of clusters and e-beam lithography with double angle shadow-edge deposition to obtain electrodes separated by nano-gaps with width below 10 nm. The nano-gap width is easily controlled only by geometrical factors such as deposited thin film thickness and evaporation angles. The usefulness of this technique is demonstrated by measuring the SET behavior of a device with a 4 nm cobalt cluster embedded in alumina, where the Coulomb blockade and incremental cluster charging can be readily identified without resorting to the differential conductivity.
Authors:
; ; ; ; ; ;  [1]
  1. INAC/SP2M - Université Joseph Fourier, CEA Grenoble, 38054 Grenoble (France)
Publication Date:
OSTI Identifier:
22283142
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM OXIDES; COBALT; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRODES; ELECTRON BEAMS; ELECTRONS; EVAPORATION; FABRICATION; MASKING; NANOSTRUCTURES; PHYSICAL RADIATION EFFECTS; SPUTTERING; THICKNESS; THIN FILMS; TRANSISTORS