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Title: Electronic states of NO{sub 2}-exposed H-terminated diamond/Al{sub 2}O{sub 3} heterointerface studied by synchrotron radiation photoemission and X-ray absorption spectroscopy

The energy band-lineup and the electronic structure of NO{sub 2}-exposed H-terminated diamond/Al{sub 2}O{sub 3} heterointerface have been investigated by synchrotron radiation photoemission and x-ray absorption near-edge structure (XANES) measurements. It is found that the energy band-lineup is stagger-type, so-called type-II, with its valence band discontinuity of as high as 3.9 eV and its conduction band discontinuity of 2.7 eV. The valence band maximum of the H-terminated diamond surface is positioned at Fermi level as a result of high-density hole accumulation on the diamond side. The XANES measurement has shown that the oxygen-derived interface state locates at about 1–3 eV above the Fermi level.
Authors:
;  [1] ;  [2] ;  [3]
  1. Synchrotron Light Application Center, Saga University, Saga 840-8502 (Japan)
  2. NTT Basic Research Laboratories, NTT Corporation, Atsugi 243-0198 (Japan)
  3. Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502 (Japan)
Publication Date:
OSTI Identifier:
22283137
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; ALUMINIUM OXIDES; DIAMONDS; ELECTRONIC STRUCTURE; FERMI LEVEL; HOLES; INTERFACES; NITROGEN DIOXIDE; PHOTOEMISSION; SURFACES; SYNCHROTRON RADIATION; VALENCE; X-RAY SPECTROSCOPY