Evidence of the metal-insulator transition in ultrathin unstrained V{sub 2}O{sub 3} thin films
- Departement Natuurkunde en Sterrenkunde, Katholieke Universiteit Leuven, Celestijnenlaan 200D, 3001 Heverlee (Belgium)
We report the strain state and transport properties of V{sub 2}O{sub 3} layers and V{sub 2}O{sub 3}/Cr{sub 2}O{sub 3} bilayers deposited by molecular beam epitaxy on (0001)-Al{sub 2}O{sub 3}. By changing the layer on top of which V{sub 2}O{sub 3} is grown, we change the lattice parameters of ultrathin V{sub 2}O{sub 3} films significantly. We find that the metal-insulator transition is strongly attenuated in ultrathin V{sub 2}O{sub 3} layers grown coherently on Al{sub 2}O{sub 3}. This is in contrast with ultrathin V{sub 2}O{sub 3} layers grown on Cr{sub 2}O{sub 3} buffer layers, where the metal-insulator transition is preserved. Our results provide evidence that the existence of the transition in ultrathin films is closely linked with the lattice deformation.
- OSTI ID:
- 22283135
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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