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Title: Efficient long wavelength interband photoluminescence from HgCdTe epitaxial films at wavelengths up to 26 μm

Photoluminescence (PL) and photoconductivity (PC) studies of Hg{sub 1−x}Cd{sub x}Te (0.19 ≤ x ≤ 0.23) epitaxial films are presented. Interband PL is observed at wavelengths from 26 to 6 μm and in the temperature range 18 K–200 K. The PL line full width at half maximum is about 6 meV (4kT) at 18 K and approaches its theoretical limit of 1.8kT at higher temperatures. Carrier recombination process is also investigated by time resolved studies of PL and PC at pulsed excitation. Radiative transitions are shown to be the dominating mechanism of carrier recombination at high excitation levels.
Authors:
; ; ;  [1] ;  [2] ; ; ;  [1] ; ;  [3]
  1. Institute for Physics of Microstructures of Russian Academy of Sciences, 603950 Nizhny Novgorod (Russian Federation)
  2. (Russian Federation)
  3. A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk (Russian Federation)
Publication Date:
OSTI Identifier:
22283122
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM TELLURIDES; CHARGE CARRIERS; EPITAXY; EXCITATION; MERCURY COMPOUNDS; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; RECOMBINATION; TEMPERATURE DEPENDENCE; THIN FILMS; TIME RESOLUTION