Efficient long wavelength interband photoluminescence from HgCdTe epitaxial films at wavelengths up to 26 μm

Journal Article · Mon Feb 17 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4866006· OSTI ID:22283122

Morozov, S. V.; Antonov, A. V.; Gavrilenko, V. I. ^[1]; Maremyanin, K. V.; Kudryavtsev, K. E.; Krasilnikova, L. V. ^[1]; Mikhailov, N. N.; Dvoretskii, S. A. ^[2]

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1. Institute for Physics of Microstructures of Russian Academy of Sciences, 603950 Nizhny Novgorod (Russian Federation)
2. A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk (Russian Federation)

Photoluminescence (PL) and photoconductivity (PC) studies of Hg{sub 1−x}Cd{sub x}Te (0.19 ≤ x ≤ 0.23) epitaxial films are presented. Interband PL is observed at wavelengths from 26 to 6 μm and in the temperature range 18 K–200 K. The PL line full width at half maximum is about 6 meV (4kT) at 18 K and approaches its theoretical limit of 1.8kT at higher temperatures. Carrier recombination process is also investigated by time resolved studies of PL and PC at pulsed excitation. Radiative transitions are shown to be the dominating mechanism of carrier recombination at high excitation levels.

• OSTI ID: 22283122
• Journal Information: Applied Physics Letters, Vol. 104, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CADMIUM TELLURIDES
CHARGE CARRIERS
EPITAXY
EXCITATION
MERCURY COMPOUNDS
PHOTOCONDUCTIVITY
PHOTOLUMINESCENCE
RECOMBINATION
TEMPERATURE DEPENDENCE
THIN FILMS
TIME RESOLUTION