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Title: High-field quasi-ballistic transport in AlGaN/GaN heterostructures

Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2 K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8 × 10{sup 7} cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.
Authors:
;  [1] ;  [2] ; ; ;  [3]
  1. Institute of Physics, NASU, Pr. Nauki 46, Kiev 03028 (Ukraine)
  2. Institute of Semiconductor Physics, NASU, Pr. Nauki 45, Kiev 03028 (Ukraine)
  3. Peter Grünberg Institute (PGI-8,PGI-9), Forschungszentrum Jülich, Jülich D-52425 (Germany)
Publication Date:
OSTI Identifier:
22283116
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRONS; GALLIUM NITRIDES; HETEROJUNCTIONS; SEMICONDUCTOR MATERIALS; VELOCITY