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Title: Direct imaging of light elements by annular dark-field aberration-corrected scanning transmission electron microscopy

In this report, we show that an annular dark-field detector in an aberration-corrected scanning transmission electron microscope allows the direct observation of light element columns in crystalline lattices. At specific imaging conditions, an enhancement of the intensities of light element columns in the presence of heavy element columns is observed. Experimental results are presented for imaging the nitrogen and carbon atomic columns at the GaN-SiC interface and within the GaN and SiC compounds. The crystal polarity of GaN at the interface is identified. The obtained findings are discussed and are well supported by image simulations.
Authors:
; ; ;  [1]
  1. Leibniz Institute of Surface Modification, Permoserstr. 15, D-04318 Leipzig (Germany)
Publication Date:
OSTI Identifier:
22283113
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARBON; COMPUTERIZED SIMULATION; CRYSTALS; GALLIUM NITRIDES; IMAGES; INTERFACES; NITROGEN; SILICON CARBIDES; TRANSMISSION ELECTRON MICROSCOPY