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Title: Distribution of nanoscale nuclei in the amorphous dome of a phase change random access memory

The nanoscale crystal nuclei in an amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} bit in a phase change memory device were evaluated by fluctuation transmission electron microscopy. The quench time in the device (∼10 ns) afforded more and larger nuclei in the melt-quenched state than in the as-deposited state. However, nuclei were even more numerous and larger in a test structure with a longer quench time (∼100 ns), verifying the prediction of nucleation theory that slower cooling produces more nuclei. It also demonstrates that the thermal design of devices will strongly influence the population of nuclei, and thus the speed and data retention characteristics.
Authors:
; ;  [1] ; ; ;  [2] ;  [1] ;  [3]
  1. Department of Materials Science and Engineering and the Coordinated Sciences Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
  2. IBM/Macronix PCRAM Joint Project, IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22283112
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ANTIMONIDES; COOLING; CRYSTALS; FLUCTUATIONS; GERMANIUM TELLURIDES; NANOSTRUCTURES; NUCLEATION; PHASE CHANGE MATERIALS; RANDOMNESS; TRANSMISSION ELECTRON MICROSCOPY