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Title: Focused ion beam high resolution grayscale lithography for silicon-based nanostructures

Nanofabrication techniques providing a fine control over the profile of silicon structures are of great importance for nanophotonics, plasmonics, sensing, micro- and nano fluidics, and biomedical applications. We report on the applicability of focused ion beam for the fine grayscale lithography, which yields surface profiles that are customized at nanoscale. The approach is based on a correlation between the ion beam irradiation dose of inorganic resist and the mask etching rate in the reactive ion etching. An exceptional property of this method is the number of gray tones that are not limited by the resist characteristics. We apply the process to fabricate unique periodic nanostructures with a slope angle varying across the structure and a period as small as 200 nm.
Authors:
;  [1]
  1. Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto (Finland)
Publication Date:
OSTI Identifier:
22283107
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CONTROL; CORRELATIONS; ETCHING; FABRICATION; ION BEAMS; MASKING; NANOSTRUCTURES; PERIODICITY; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; RESOLUTION; SILICON; SURFACES