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Title: Band gap tunning in BN-doped graphene systems with high carrier mobility

Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers.
Authors:
;  [1] ; ;  [2]
  1. KAUST, PSE Division, Thuwal 23955-6900 (Saudi Arabia)
  2. Central Department of Physics, Tribhuvan University, Kirtipur, Kathmandu (Nepal)
Publication Date:
OSTI Identifier:
22283106
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON NITRIDES; CARRIER MOBILITY; CHARGE CARRIERS; DENSITY FUNCTIONAL METHOD; DOPED MATERIALS; EFFECTIVE MASS; ELECTRONIC STRUCTURE; ENERGY GAP; GRAPHENE; LAYERS; SUPERLATTICES