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Title: Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime

The microstructure of N-face InAlN layers, lattice-matched to GaN, was investigated by scanning transmission electron microscopy and atom probe tomography. These layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) in the N-rich regime. Microstructural analysis shows an absence of the lateral composition modulation that was previously observed in InAlN films grown by PAMBE. A room temperature two-dimensional electron gas (2DEG) mobility of 1100 cm{sup 2}/V s and 2DEG sheet charge density of 1.9 × 10{sup 13} cm{sup −2} was measured for N-face GaN/AlN/GaN/InAlN high-electron-mobility transistors with lattice-matched InAlN back barriers.
Authors:
; ; ;  [1] ; ; ; ;  [2]
  1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)
  2. Materials Department, University of California, Santa Barbara, California 93106 (United States)
Publication Date:
OSTI Identifier:
22283100
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; CHARGE DENSITY; DIFFUSION BARRIERS; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDES; INDIUM COMPOUNDS; LAYERS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY