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Title: Band gap of epitaxial in-plane-dimerized single-phase NbO{sub 2} films

We demonstrate the epitaxial growth of high quality crystalline phase-pure NbO{sub 2} films on various oxide substrates using molecular beam epitaxy. Using a combination of reflection high-energy electron diffraction and x-ray diffraction we show that the films grow with the pseudo-rutile (100) orientation out of plane. The band gap of the NbO{sub 2} films is determined to be at least 1.0 eV using a combination of x-ray photoelectron spectroscopy and inverse photoelectron spectroscopy, in conjunction with hybrid density functional calculations of the density of states.
Authors:
; ;  [1] ; ;  [2]
  1. Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)
  2. Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States)
Publication Date:
OSTI Identifier:
22283093
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL GROWTH; DENSITY FUNCTIONAL METHOD; ELECTRON DIFFRACTION; ELECTRONIC STRUCTURE; ENERGY-LEVEL DENSITY; MOLECULAR BEAM EPITAXY; NIOBIUM OXIDES; ORIENTATION; REFLECTION; RUTILE; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY