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Title: Hetero-epitaxial EuO interfaces studied by analytic electron microscopy

With nearly complete spin polarization, the ferromagnetic semiconductor europium monoxide could enable next-generation spintronic devices by providing efficient ohmic spin injection into silicon. Spin injection is greatly affected by the quality of the interface between the injector and silicon. Here, we use atomic-resolution scanning transmission electron microscopy in conjunction with electron energy loss spectroscopy to directly image and chemically characterize a series of EuO|Si and EuO|YAlO{sub 3} interfaces fabricated using different growth conditions. We identify the presence of europium silicides and regions of disorder at the EuO|Si interfaces, imperfections that could significantly reduce spin injection efficiencies via spin-flip scattering.
Authors:
 [1] ; ; ;  [2] ; ;  [3] ; ;  [1] ;  [4] ;  [2] ;  [4]
  1. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States)
  2. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
  3. Zentrum für Elektronische Korrelationen und Magnetismus, Universität Augsburg, Universitätsstraße 1, D-86159 Augsburg (Germany)
  4. (United States)
Publication Date:
OSTI Identifier:
22283092
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINATES; ELECTRONS; ENERGY-LOSS SPECTROSCOPY; EPITAXY; EUROPIUM OXIDES; EUROPIUM SILICIDES; FERROMAGNETISM; HETEROJUNCTIONS; INTERFACES; MAGNETIC SEMICONDUCTORS; SCANNING ELECTRON MICROSCOPY; SILICON; SPIN; SPIN FLIP; SPIN ORIENTATION; TRANSMISSION ELECTRON MICROSCOPY; YTTRIUM COMPOUNDS