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Title: Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors

Forward gate-bias stress experiments are performed to investigate the variation of trap states under Schottky contact in GaN-based high electron mobility transistors. Traps with activation energy E{sub T} ranging from 0.22 eV to 0.31 eV are detected at the gate-semiconductor interface by dynamic conductance technique. Trap density decreases prominently after stressing, particularly for traps with E{sub T} > 0.24 eV. X-ray photoelectron spectroscopy measurements reveal a weaker Ga-O peak on the stressed semiconductor surface. It is postulated that oxygen is stripped by Ni to form NiO upon electrical stress, contributing to the decrease in O{sub N} donor sates under the gate contact.
Authors:
; ; ;  [1] ;  [2] ; ; ; ;  [3]
  1. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071 (China)
  2. (China)
  3. Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 (China)
Publication Date:
OSTI Identifier:
22283082
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ALUMINIUM NITRIDES; DENSITY; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GALLIUM NITRIDES; HETEROJUNCTIONS; INTERFACES; NICKEL OXIDES; OXYGEN; SEMICONDUCTOR MATERIALS; STRESSES; SURFACES; TRANSISTORS; TRAPS; X-RAY PHOTOELECTRON SPECTROSCOPY