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Title: Crystallinity dependence of resistive switching in Ti/Pr(Sr{sub 0.1}Ca{sub 0.9}){sub 2}Mn{sub 2}O{sub 7}/Pt: Filamentary versus interfacial mechanisms

The resistive switching characteristics of two Pr(Sr{sub 0.1}Ca{sub 0.9}){sub 2}Mn{sub 2}O{sub 7} (PSCMO)-based devices (Ti/PSCMO-1/Pt and Ti/PSCMO-2/Pt) prepared under different conditions have been investigated. The two devices both showed bipolar switching behaviors. Scanning electron microscope measurements showed different grain boundaries in the two PSCMO films. By fitting the I-V curves and area dependence of the device resistance, we found that the Ti/PSCMO-1/Pt device indicated filamentary conduction, whereas interfacial effects dominated the conductance in Ti/PSCMO-2/Pt device. Our results suggest that the different grain boundaries may play a critical role in oxygen vacancy movement and hence result in the two different resistive switching properties.
Authors:
; ; ; ; ;  [1] ;  [2]
  1. College of Physics Science and Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22283081
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CALCIUM COMPOUNDS; CRYSTALS; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; INTERFACES; MANGANATES; OXYGEN; PLATINUM; SCANNING ELECTRON MICROSCOPY; STRONTIUM COMPOUNDS; THIN FILMS; TITANIUM; VACANCIES