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Title: Detection of minority carrier traps in p-type 4H-SiC

Contrarily to the case of n-type 4H-SiC, very little is known about the presence of minority carrier traps in p-type epilayers. In this study, we performed the electrical characterization of as-grown, electron irradiated, and thermally oxidized p-type 4H-SiC, by using minority carrier transient spectroscopy. Four minority carrier traps are reported in 1.6–2.3 eV energy range above the valence band edge (E{sub V}). Particular emphasis is given to the mid-gap minority carrier trap (EH{sub 6∕7}) and to its correlation to an energetically close mid-gap majority carrier trap (HK4)
Authors:
;  [1]
  1. Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510 (Japan)
Publication Date:
OSTI Identifier:
22283073
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; CHARGE CARRIERS; CORRELATIONS; ELECTRON BEAMS; ELECTRONS; EV RANGE; IRRADIATION; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; P-TYPE CONDUCTORS; SILICON CARBIDES; TRANSIENTS; TRAPS; VALENCE