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Title: p-type doping of MoS{sub 2} thin films using Nb

We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited MoS{sub 2}. Niobium was found to act as an efficient acceptor up to relatively high density in MoS{sub 2} films. For a hole density of 3.1 × 10{sup 20} cm{sup −3}, Hall mobility of 8.5 cm{sup 2} V{sup −1} s{sup −1} was determined, which matches well with the theoretically expected values. X-ray diffraction scans and Raman characterization indicated that the film had good out-of-plane crystalline quality. Absorption measurements showed that the doped sample had similar characteristics to high-quality undoped samples, with a clear absorption edge at 1.8 eV. Scanning transmission electron microscope imaging showed ordered crystalline nature of the Nb-doped MoS{sub 2} layers stacked in the [0001] direction. This demonstration of substitutional p-doping in large area epitaxial MoS{sub 2} could help in realizing a wide variety of electrical and opto-electronic devices based on layered metal dichalcogenides.
Authors:
; ; ; ;  [1] ; ;  [2] ;  [3] ;  [4] ;  [5] ;  [6] ;  [7] ;  [8] ;  [4] ;  [5] ;  [5] ;  [9] ; ;  [1] ;  [5]
  1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  2. Department of Chemistry, The Ohio State University, Columbus, Ohio 43210 (United States)
  3. Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  4. Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States)
  5. (United States)
  6. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
  7. (Spain)
  8. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
  9. Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)
Publication Date:
OSTI Identifier:
22283072
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; DOPED MATERIALS; EPITAXY; HALL EFFECT; HOLE MOBILITY; HOLES; LAYERS; MOLYBDENUM SULFIDES; NIOBIUM; P-TYPE CONDUCTORS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION