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Title: Heteroepitaxial growth of Cu{sub 2}ZnSnS{sub 4} thin film on sapphire substrate by radio frequency magnetron sputtering

The heteroepitaxy of tetragonal Cu2ZnSnS4 (CZTS) thin films on hexagonal sapphire (0001) single crystal substrates is successfully obtained by radio frequency magnetron sputtering. The sputtered CZTS film has a mirror-like smooth surface with a root mean square roughness of about 5.44 nm. X-ray θ-2θ scans confirm that CZTS film is (112) oriented on sapphire with an out of plane arrangement of CZTS (112) ‖ sapphire (0001). X-ray Phi scan further illustrates an in plane ordering of CZTS [201{sup ¯}] ‖ sapphire [21{sup ¯}1{sup ¯}0]. The high resolution transmission electron microscopy image of the interface region clearly shows that the CZTS thin film epitaxially grows on the sapphire (0001) substrate. The band gap of the film is found to be approximately 1.51 eV.
Authors:
; ; ; ;  [1] ;  [2] ;  [3]
  1. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia)
  2. Mark Wainwright Analytical Center, University of New South Wales, Sydney, NSW 2052 (Australia)
  3. Department of Materials Science and Engineering, Xiamen University, Xiamen 361005, Fujian Province (China)
Publication Date:
OSTI Identifier:
22283071
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COPPER COMPOUNDS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; ENERGY GAP; EPITAXY; INTERFACES; MONOCRYSTALS; RADIOWAVE RADIATION; ROUGHNESS; SAPPHIRE; SPUTTERING; SUBSTRATES; SURFACES; THIN FILMS; TIN SULFIDES; TRANSMISSION ELECTRON MICROSCOPY; ZINC COMPOUNDS