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Title: Investigation of crystalline and electronic band alignment properties of GaP/Ge(111) heterostructure

Abstract

Gallium phosphide (GaP) epitaxial layer and nanostructures are grown on n-Ge(111) substrates using metal organic vapour phase epitaxy. It is confirmed by high resolution x-ray diffraction measurements that the layer is highly crystalline and oriented with the coexistence of two domains, i.e., GaP(111)A and GaP(111)B, with an angle of 60° between them due to the formation of a wurtzite monolayer at the interface. The valence band offset between GaP and Ge is 0.7 ± 0.1 eV as determined from the valence band onsets and from Kraut's method. A band alignment diagram for GaP/Ge/GeOx is also constructed which can be used to design monolithic optoelectronic integrated circuits.

Authors:
; ; ; ; ; ; ;  [1];  [2]
  1. Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India)
  2. UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, Madhya Pradesh 452001 (India)
Publication Date:
OSTI Identifier:
22283069
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; GALLIUM PHOSPHIDES; GERMANIUM; INTERFACES; LAYERS; NANOSTRUCTURES; ORGANOMETALLIC COMPOUNDS; PHASE DIAGRAMS; SUBSTRATES; VALENCE; VAPOR PHASE EPITAXY; X-RAY DIFFRACTION

Citation Formats

Dixit, V. K., Kumar, Shailendra, Singh, S. D., Khamari, S. K., Kumar, R., Tiwari, Pragya, Sharma, T. K., Oak, S. M., and Phase, D. M. Investigation of crystalline and electronic band alignment properties of GaP/Ge(111) heterostructure. United States: N. p., 2014. Web. doi:10.1063/1.4867526.
Dixit, V. K., Kumar, Shailendra, Singh, S. D., Khamari, S. K., Kumar, R., Tiwari, Pragya, Sharma, T. K., Oak, S. M., & Phase, D. M. Investigation of crystalline and electronic band alignment properties of GaP/Ge(111) heterostructure. United States. https://doi.org/10.1063/1.4867526
Dixit, V. K., Kumar, Shailendra, Singh, S. D., Khamari, S. K., Kumar, R., Tiwari, Pragya, Sharma, T. K., Oak, S. M., and Phase, D. M. 2014. "Investigation of crystalline and electronic band alignment properties of GaP/Ge(111) heterostructure". United States. https://doi.org/10.1063/1.4867526.
@article{osti_22283069,
title = {Investigation of crystalline and electronic band alignment properties of GaP/Ge(111) heterostructure},
author = {Dixit, V. K. and Kumar, Shailendra and Singh, S. D. and Khamari, S. K. and Kumar, R. and Tiwari, Pragya and Sharma, T. K. and Oak, S. M. and Phase, D. M.},
abstractNote = {Gallium phosphide (GaP) epitaxial layer and nanostructures are grown on n-Ge(111) substrates using metal organic vapour phase epitaxy. It is confirmed by high resolution x-ray diffraction measurements that the layer is highly crystalline and oriented with the coexistence of two domains, i.e., GaP(111)A and GaP(111)B, with an angle of 60° between them due to the formation of a wurtzite monolayer at the interface. The valence band offset between GaP and Ge is 0.7 ± 0.1 eV as determined from the valence band onsets and from Kraut's method. A band alignment diagram for GaP/Ge/GeOx is also constructed which can be used to design monolithic optoelectronic integrated circuits.},
doi = {10.1063/1.4867526},
url = {https://www.osti.gov/biblio/22283069}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 9,
volume = 104,
place = {United States},
year = {Mon Mar 03 00:00:00 EST 2014},
month = {Mon Mar 03 00:00:00 EST 2014}
}