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Title: Investigation of crystalline and electronic band alignment properties of GaP/Ge(111) heterostructure

Gallium phosphide (GaP) epitaxial layer and nanostructures are grown on n-Ge(111) substrates using metal organic vapour phase epitaxy. It is confirmed by high resolution x-ray diffraction measurements that the layer is highly crystalline and oriented with the coexistence of two domains, i.e., GaP(111)A and GaP(111)B, with an angle of 60° between them due to the formation of a wurtzite monolayer at the interface. The valence band offset between GaP and Ge is 0.7 ± 0.1 eV as determined from the valence band onsets and from Kraut's method. A band alignment diagram for GaP/Ge/GeOx is also constructed which can be used to design monolithic optoelectronic integrated circuits.
Authors:
; ; ; ; ; ; ;  [1] ;  [2]
  1. Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India)
  2. UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, Madhya Pradesh 452001 (India)
Publication Date:
OSTI Identifier:
22283069
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; GALLIUM PHOSPHIDES; GERMANIUM; INTERFACES; LAYERS; NANOSTRUCTURES; ORGANOMETALLIC COMPOUNDS; PHASE DIAGRAMS; SUBSTRATES; VALENCE; VAPOR PHASE EPITAXY; X-RAY DIFFRACTION