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Title: Intrinsic stress evolution during amorphous oxide film growth on Al surfaces

The intrinsic stress evolution during formation of ultrathin amorphous oxide films on Al(111) and Al(100) surfaces by thermal oxidation at room temperature was investigated in real-time by in-situ substrate curvature measurements and detailed atomic-scale microstructural analyses. During thickening of the oxide a considerable amount of growth stresses is generated in, remarkably even amorphous, ultrathin Al{sub 2}O{sub 3} films. The surface orientation-dependent stress evolutions during O adsorption on the bare Al surfaces and during subsequent oxide-film growth can be interpreted as a result of (i) adsorption-induced surface stress changes and (ii) competing processes of free volume generation and structural relaxation, respectively.
Authors:
; ;  [1] ;  [1] ;  [2]
  1. Max Planck Institute for Intelligent Systems (former Max Planck Institute for Metals Research), Heisenbergstraße 3, D-70569 Stuttgart (Germany)
  2. (Germany)
Publication Date:
OSTI Identifier:
22283065
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ADSORPTION; ALUMINIUM; ALUMINIUM OXIDES; CRYSTAL STRUCTURE; MICROSTRUCTURE; ORIENTATION; OXIDATION; RELAXATION; STRESSES; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS