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Title: High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20 mA and a 27.0% efficiency droop at 100 mA (corresponding to a current density of 69 A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.
Authors:
; ;  [1]
  1. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300 (China)
Publication Date:
OSTI Identifier:
22283059
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; CURRENT DENSITY; GALLIUM; GALLIUM NITRIDES; HETEROJUNCTIONS; INCLINATION; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; POLARIZATION; QUANTUM EFFICIENCY; QUANTUM WELLS; RECOMBINATION