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Title: Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes

Two kinds of green InGaN light emitting diodes (LEDs) have been investigated in order to understand the different slopes in logarithmic light output power-current (L-I) curves. Through the analysis of the carrier rate equation and by considering the carrier density-dependent the injection efficiency into quantum wells, the slopes of the logarithmic L-I curves can be more rigorously understood. The low current level, two as the tunneling current is initially dominant. The high current level beyond the peak of the external quantum efficiency (EQE) diminishes below one as the carrier overflow becomes dominant. In addition, the normalized carrier injection efficiency can be obtained by analyzing the slopes of the logarithmic L-I curves. The carrier injection efficiency decreases after the EQE peak of the InGaN LEDs, determined from the analysis of the slopes of the logarithmic L-I curves.
Authors:
 [1] ; ; ;  [2]
  1. Department of Applied Physics and Electronics, Sangji University, Wonju, Gangwon-Do 220-702 (Korea, Republic of)
  2. Department of Electronics and Communication Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22283058
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CARRIER DENSITY; CHARGE CARRIERS; ELECTRIC CURRENTS; LIGHT EMITTING DIODES; QUANTUM EFFICIENCY; QUANTUM WELLS; REACTION KINETICS; RECOMBINATION; TUNNEL EFFECT