Aluminum nitride nanophotonic circuits operating at ultraviolet wavelengths

Journal Article · Mon Mar 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4867529· OSTI ID:22283057

Stegmaier, M.; Ebert, J.; Pernice, W. H. P., ^[1]; Meckbach, J. M.; Ilin, K.; Siegel, M. ^[2]

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1. Institute of Nanotechnology, Karlsruhe Institute of Technology, 76133 Karlsruhe (Germany)
2. Institute of Micro- und Nanoelectronic Systems, Karlsruhe Institute of Technology, 76187 Karlsruhe (Germany)

Aluminum nitride (AlN) has recently emerged as a promising material for integrated photonics due to a large bandgap and attractive optical properties. Exploiting the wideband transparency, we demonstrate waveguiding in AlN-on-Insulator circuits from near-infrared to ultraviolet wavelengths using nanophotonic components with dimensions down to 40 nm. By measuring the propagation loss over a wide spectral range, we conclude that both scattering and absorption of AlN-intrinsic defects contribute to strong attenuation at short wavelengths, thus providing guidelines for future improvements in thin-film deposition and circuit fabrication.

• OSTI ID: 22283057
• Journal Information: Applied Physics Letters, Vol. 104, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION
ALUMINIUM NITRIDES
ATTENUATION
ENERGY GAP
FABRICATION
NANOSTRUCTURES
OPACITY
THIN FILMS
ULTRAVIOLET RADIATION
WAVE PROPAGATION
WAVEGUIDES