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Title: Aluminum nitride nanophotonic circuits operating at ultraviolet wavelengths

Aluminum nitride (AlN) has recently emerged as a promising material for integrated photonics due to a large bandgap and attractive optical properties. Exploiting the wideband transparency, we demonstrate waveguiding in AlN-on-Insulator circuits from near-infrared to ultraviolet wavelengths using nanophotonic components with dimensions down to 40 nm. By measuring the propagation loss over a wide spectral range, we conclude that both scattering and absorption of AlN-intrinsic defects contribute to strong attenuation at short wavelengths, thus providing guidelines for future improvements in thin-film deposition and circuit fabrication.
Authors:
; ;  [1] ; ; ;  [2]
  1. Institute of Nanotechnology, Karlsruhe Institute of Technology, 76133 Karlsruhe (Germany)
  2. Institute of Micro- und Nanoelectronic Systems, Karlsruhe Institute of Technology, 76187 Karlsruhe (Germany)
Publication Date:
OSTI Identifier:
22283057
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; ALUMINIUM NITRIDES; ATTENUATION; ENERGY GAP; FABRICATION; NANOSTRUCTURES; OPACITY; THIN FILMS; ULTRAVIOLET RADIATION; WAVE PROPAGATION; WAVEGUIDES