Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
- Fen Edebiyat Fakultesi, Fizik Bolumu, Inonu Universitesi, 44280 Malatya (Turkey)
A tunneling spectroscopy study is presented of superconducting MoN and Nb{sub 0.8}Ti{sub 0.2}N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2 meV and 2.4 meV, respectively, with a corresponding critical temperature of 11.5 K and 13.4 K, among the highest reported T{sub c} values achieved by the ALD technique. Tunnel junctions were obtained using a mechanical contact method with a Au tip. While the native oxides of these films provided poor tunnel barriers, high quality tunnel junctions with low zero bias conductance (below ∼10%) were obtained using an artificial tunnel barrier of Al{sub 2}O{sub 3} on the film's surface grown ex situ by ALD. We find a large critical current density on the order of 4 × 10{sup 6} A/cm{sup 2} at T = 0.8T{sub c} for a 60 nm MoN film and demonstrate conformal coating capabilities of ALD onto high aspect ratio geometries. These results suggest that the ALD technique offers significant promise for thin film superconducting device applications.
- OSTI ID:
- 22283055
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
First complex oxide superconductor by atomic layer deposition
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journal | January 2018 |
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
ASPECT RATIO
CRITICAL CURRENT
CRITICAL TEMPERATURE
MOLYBDENUM NITRIDES
NIOBIUM COMPOUNDS
SPECTROSCOPY
SUPERCONDUCTING DEVICES
SUPERCONDUCTING JUNCTIONS
SUPERCONDUCTIVITY
SUPERCONDUCTORS
THIN FILMS
TITANIUM NITRIDES
TUNNEL EFFECT