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Title: Spin drift in highly doped n-type Si

A quantitative estimation of spin drift velocity in highly doped n-type silicon (Si) at 8‚ÄČK is presented in this letter. A local two-terminal Hanle measurement enables the detection of a modulation of spin signals from the Si as a function of an external electric field, and this modulation is analyzed by using a spin drift-diffusion equation and an analytical solution of the Hanle-type spin precession. The analyses reveal that the spin drift velocity is linearly proportional to the electric field. The contribution of the spin drift effect to the spin signals is crosschecked by introducing a modified nonlocal four-terminal method.
Authors:
; ;  [1] ; ; ;  [2] ;  [3] ;  [1] ;  [4]
  1. Graduate School of Engineering Science, Osaka University Osaka (Japan)
  2. Advanced Technology Development Center, TDK Cooperation, Chiba (Japan)
  3. AIT, Akita Research Institute of Advanced Technology, Akita (Japan)
  4. (Japan)
Publication Date:
OSTI Identifier:
22283053
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANALYTICAL SOLUTION; CRYSTAL DOPING; DIFFUSION EQUATIONS; ELECTRIC FIELDS; MODULATION; N-TYPE CONDUCTORS; PRECESSION; SILICON; SPIN; TEMPERATURE RANGE 0000-0013 K