Spin drift in highly doped n-type Si

Journal Article · Mon Mar 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4867650· OSTI ID:22283053

Kameno, Makoto; Ando, Yuichiro; Shinjo, Teruya ^[1]; Koike, Hayato; Sasaki, Tomoyuki; Oikawa, Tohru ^[2]; Suzuki, Toshio ^[3]; Shiraishi, Masashi ^[1]

---

1. Graduate School of Engineering Science, Osaka University Osaka (Japan)
2. Advanced Technology Development Center, TDK Cooperation, Chiba (Japan)
3. AIT, Akita Research Institute of Advanced Technology, Akita (Japan)

A quantitative estimation of spin drift velocity in highly doped n-type silicon (Si) at 8 K is presented in this letter. A local two-terminal Hanle measurement enables the detection of a modulation of spin signals from the Si as a function of an external electric field, and this modulation is analyzed by using a spin drift-diffusion equation and an analytical solution of the Hanle-type spin precession. The analyses reveal that the spin drift velocity is linearly proportional to the electric field. The contribution of the spin drift effect to the spin signals is crosschecked by introducing a modified nonlocal four-terminal method.

• OSTI ID: 22283053
• Journal Information: Applied Physics Letters, Vol. 104, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANALYTICAL SOLUTION
CRYSTAL DOPING
DIFFUSION EQUATIONS
ELECTRIC FIELDS
MODULATION
N-TYPE CONDUCTORS
PRECESSION
SILICON
SPIN
TEMPERATURE RANGE 0000-0013 K