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Title: Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

We investigated the formation of cubic boron nitride (c-BN) thin films on diamond (001) and (111) substrates by ion-beam-assisted molecular beam epitaxy (MBE). The metastable c-BN (sp{sup 3}-bonded BN) phase can be epitaxially grown as a result of the interplay between competitive phase formation and selective etching. We show that a proper adjustment of acceleration voltage for N{sub 2}{sup +} and Ar{sup +} ions is a key to selectively discriminate non-sp{sup 3} BN phases. At low acceleration voltage values, the sp{sup 2}-bonded BN is dominantly formed, while at high acceleration voltages, etching dominates irrespective of the bonding characteristics of BN.
Authors:
; ; ; ;  [1]
  1. NTT Basic Research Laboratories, NTT Corporation 3-1 Morinosato–Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)
Publication Date:
OSTI Identifier:
22283049
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARGON IONS; BORON NITRIDES; CRYSTAL GROWTH; CUBIC LATTICES; DIAMONDS; ELECTRIC POTENTIAL; ETCHING; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; SUBSTRATES; THIN FILMS