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Title: The E3 center in zinc oxide: Evidence for involvement of hydrogen

Proton implantation is shown to increase the concentration of the so called and commonly observed E3 defect level in zinc oxide (ZnO). Box and single profiles of protons with doses ranging from 6×10{sup 10} cm{sup −2} to 4.3×10{sup 12} cm{sup −2} were implanted into hydrothermally grown ZnO samples with original concentrations of E3 below 5×10{sup 14} cm{sup −3}. Capacitance-Voltage profiling and junction spectroscopy measurements showed that the charge carrier concentration and absolute concentration of E3 centers increase by more than one order of magnitude compared to the as-grown samples as well as control samples implanted with He ions. The results provide strong evidence for the involvement of H in the formation of the E3 center, and a complex involving interstitial H and an oxygen sub-lattice primary defect are discussed.
Authors:
; ; ;  [1]
  1. Physics Department/Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, Oslo N-0316 (Norway)
Publication Date:
OSTI Identifier:
22283047
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITANCE; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; E CENTERS; ELECTRIC POTENTIAL; HELIUM IONS; HYDROGEN; INTERSTITIALS; OXYGEN; PROTONS; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPY; ZINC OXIDES