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Title: Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors

Scaling down the channel-thickness (t{sub ch}) in GaN/(In, Al, Ga)N high-electron-mobility-transistors (HEMTs) is essential to eliminating short-channel effects in sub 100 nm gate length HEMTs. However, this scaling can degrade both charge density (n{sub s}) and mobility (μ), thereby reducing channel-conductivity. In this study, the back-barrier design in N-polar GaN/(In, Al, Ga)N was engineered to achieve highly conductive-channels with t{sub ch} < 5-nm using metal organic chemical vapor deposition. Compositional-grading was found to be the most effective approach in reducing channel-conductivity for structures with t{sub ch} ∼ 3-nm. For a HEMT with 3-nm-thick-channel, a sheet-resistance of 329 Ω/◻ and a peak-transconductance of 718 mS/mm were demonstrated.
Authors:
; ; ; ; ; ; ;  [1] ;  [1] ;  [2]
  1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22283045
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; CHARGE DENSITY; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM NITRIDES; INTERFACES; ORGANOMETALLIC COMPOUNDS; THICKNESS; TRANSISTORS