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Title: Band alignment of HfO{sub 2}/Al{sub 0.25}Ga{sub 0.75}N determined by x-ray photoelectron spectroscopy: Effect of SiH{sub 4} surface treatment

The band-alignment of atomic layer deposited (ALD)-HfO{sub 2}/Al{sub 0.25}Ga{sub 0.75}N was studied by high resolution x-ray photoelectron spectroscopy measurements for both the non-passivated and SiH{sub 4} passivated AlGaN surfaces. The valence band offset and the conduction band offset for the ALD-HfO{sub 2}/Al{sub 0.25}Ga{sub 0.75}N interface were found to be 0.43 eV and 1.47 eV, respectively, for the non-passivated sample, and 0.59 eV and 1.31 eV, respectively, for the SiH{sub 4}-passivated sample. The difference in the band alignment is dominated by the band bending or band shift in the AlGaN substrate as a result of the different interlayers formed by the two surface preparations.
Authors:
; ; ;  [1] ; ;  [2]
  1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260 (Singapore)
  2. Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)
Publication Date:
OSTI Identifier:
22283042
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALIGNMENT; ALUMINIUM COMPOUNDS; DEPOSITION; ELECTRONIC STRUCTURE; GALLIUM NITRIDES; HAFNIUM OXIDES; INTERFACES; LAYERS; SILANES; SUBSTRATES; SURFACE TREATMENTS; SURFACES; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY