Atomic oxidation of large area epitaxial graphene on 4H-SiC(0001)

Journal Article · Mon Mar 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4867348· OSTI ID:22283037

Velez-Fort, E. ^[1]; Ouerghi, A. ^[1]; Silly, M. G.; Sirtti, F. ^[2]; Eddrief, M.; Marangolo, M. ^[3]; Shukla, A. ^[4]

---

1. Laboratoire de Photonique et de Nanostructures (CNRS-LPN), Route de Nozay, 91460 Marcoussis (France)
2. Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex (France)
3. CNRS, UMR 7588, Institut des NanoSciences de Paris (INSP), F-75005 Paris (France)
4. Institut de Minéralogie et de Physique des Milieux Condensés, CNRS–UMR7590, Sorbonne Universités-Pierre et Marie Curie, 4 Pl. Jussieu, 75005 Paris (France)

Structural and electronic properties of epitaxial graphene on 4H-SiC were studied before and after an atomic oxidation process. X-ray photoemission spectroscopy indicates that oxygen penetrates into the substrate and decouples a part of the interface layer. Raman spectroscopy demonstrates the increase of defects due to the presence of oxygen. Interestingly, we observed on the near edge x-ray absorption fine structure spectra a splitting of the π* peak into two distinct resonances centered at 284.7 and 285.2 eV. This double structure smears out after the oxidation process and permits to probe the interface architecture between graphene and the substrate.

• OSTI ID: 22283037
• Journal Information: Applied Physics Letters, Vol. 104, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTRA
CRYSTAL STRUCTURE
EPITAXY
FINE STRUCTURE
GRAPHENE
INTERFACES
LAYERS
OXIDATION
OXYGEN
PHOTOEMISSION
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SILICON CARBIDES
SUBSTRATES
X-RAY SPECTRA