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Title: Enhancement of thermal stability and water resistance in yttrium-doped GeO{sub 2}/Ge gate stack

We have systematically investigated the material and electrical properties of yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) on Germanium (Ge). A significant improvement of both thermal stability and water resistance were demonstrated by Y-GeO{sub 2}/Ge stack, compared to that of pure GeO{sub 2}/Ge stack. The excellent electrical properties of Y-GeO{sub 2}/Ge stacks with low D{sub it} were presented as well as enhancement of dielectric constant in Y-GeO{sub 2} layer, which is beneficial for further equivalent oxide thickness scaling of Ge gate stack. The improvement of thermal stability and water resistance are discussed both in terms of the Gibbs free energy lowering and network modification of Y-GeO{sub 2}.
Authors:
; ; ; ; ;  [1] ;  [2]
  1. Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22283034
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; DOPED MATERIALS; FREE ENTHALPY; GERMANIUM; GERMANIUM OXIDES; INTERFACES; LAYERS; PERMITTIVITY; PHASE STABILITY; THICKNESS; YTTRIUM; YTTRIUM COMPOUNDS